• Title of article

    Ion bombardment in a normal-gate FED

  • Author/Authors

    Yingbin Gao، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    5
  • From page
    19
  • To page
    23
  • Abstract
    Due to the electron-gas collision ionization in a FED, positively charged ions bombard the cathode. This can destroy the field emitters and cause instabilities. In this study we have selected a normal-gate sub-cell to calculate the ion bombardment (IB). In the cases of uniform emitting and ring emitting, the process of ion bombardment and cathode damage has been investigated
  • Keywords
    CNT cathode , Numerical simulation , Ion bombardment
  • Journal title
    Applied Surface Science
  • Serial Year
    2005
  • Journal title
    Applied Surface Science
  • Record number

    1000751