Title of article
Ion bombardment in a normal-gate FED
Author/Authors
Yingbin Gao، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
19
To page
23
Abstract
Due to the electron-gas collision ionization in a FED, positively charged ions bombard the cathode. This can destroy the field
emitters and cause instabilities. In this study we have selected a normal-gate sub-cell to calculate the ion bombardment (IB). In
the cases of uniform emitting and ring emitting, the process of ion bombardment and cathode damage has been investigated
Keywords
CNT cathode , Numerical simulation , Ion bombardment
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1000751
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