Title of article
Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation
Author/Authors
Nanako Shiozaki، نويسنده , , Sanguan Anantathanasarn)، نويسنده , , Taketomo Sato a، نويسنده , , Tamotsu Hashizume a، نويسنده , , Hideki Hasegawa a، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
71
To page
74
Abstract
Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their
photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly
reduced with reduction of Wand d, due to non-radiative recombination through surface states. Surface passivation by growing a
Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties.
Keywords
quantum wire , Surface passivation , Photoluminescence , AlGaAs , Surface states , GaAS
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1000820
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