Control of Zn composition (0 < x < 1) in Cd1 xZnxTe epitaxial layers on GaAs substrates grown by MOVPE

Cd1 xZnxTe epitaxial layers over the entire composition range (x from 0 to 1) were grown on (1 0 0) GaAs substrates by atmospheric pressure metalorganic vapor phase epitaxy. A growth temperature of 560 8C, and the group VI/II precursor flow rate ratio of 2 or larger enabled us to control the Zn composition strictly on the grown epilayers. Epitaxial layers with high crystal quality were obtained in a wide range of Zn composition. The double crystal rocking curves (DCRC) full-width at half maximum (FWHM) values were between 260 and 670 arcsec at the end points of alloy range. The low-temperature PL measurements showed distinct bound-exciton emissions and weak deep-level emissions