Title of article
Phosphorous passivation of In0.53Ga0.47As using MOVPE and characterization of Au–Ga2O3 (Gd2O3)–In0.53Ga0.47As MIS capacitor
Author/Authors
S. Pal، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
196
To page
201
Abstract
A study of phosphorous passivation of the interface states of undoped In0.53Ga0.47As has been carried out. Phosphorous
surface passivation has been achieved by: (1) exchange reaction of the InGaAs surface under phosphine vapor or (2) direct
growth of InGaP/GaP thin epitaxial layers in a metal organic vapour phase epitaxy (MOVPE) reactor. The passivated surfaces
have been characterized using X-ray photoelectron spectroscopy and capacitance–voltage measurements of the MIS devices.
The minimum interface state density of 2.90 1011 eV 1 cm 2 was obtained for Au/Ga2O3(Gd2O3)/GaP/In0.53Ga0.47As
structure
Keywords
Surface passivation , Interface state density , In0.53Ga0.47As , XPS , C–V measurement
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1000977
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