Phosphorous passivation of In0.53Ga0.47As using MOVPE and characterization of Au–Ga2O3 (Gd2O3)–In0.53Ga0.47As MIS capacitor

A study of phosphorous passivation of the interface states of undoped In0.53Ga0.47As has been carried out. Phosphorous surface passivation has been achieved by: (1) exchange reaction of the InGaAs surface under phosphine vapor or (2) direct growth of InGaP/GaP thin epitaxial layers in a metal organic vapour phase epitaxy (MOVPE) reactor. The passivated surfaces have been characterized using X-ray photoelectron spectroscopy and capacitance–voltage measurements of the MIS devices. The minimum interface state density of 2.90 1011 eV 1 cm 2 was obtained for Au/Ga2O3(Gd2O3)/GaP/In0.53Ga0.47As structure