Author/Authors :
I. Sayago، نويسنده , , M. Aleixandre، نويسنده , , L. Are´s، نويسنده , , M.J. Ferna´ndez، نويسنده , , J.P. Santos، نويسنده , ,
J. Gutie´rrez، نويسنده , , M.C. Horrillo، نويسنده ,
Abstract :
The influence of the oxygen concentration and the rf power variation on the zinc oxide films structural properties were
studied. ZnO films were deposited on silicon substrate by rf magnetron sputtering in reactive plasma using a zinc oxide target.
Crystalline structures and roughness characteristics of the films were investigated by X-ray diffraction (XRD) and atomic
force microscopy (AFM) measurements, respectively. Deposition conditions were optimized to obtain films of good quality
suitable for the fabrication of surface acoustic wave (SAW) devices. The optimal parameters to obtain a good piezoelectric
material have been: rf power 50 W and reactive plasma
Keywords :
ZNO , Piezoelectric material , Atomic force microscopy , magnetron sputtering , X-ray diffraction
