(Zr, Sn)TiO4 thin films for application in electronics

Thin films of zirconium tin titanate, (Zr0.8Sn0.2)TiO4 (ZST) were deposited using a pulsed electron beam source based on a channel-spark discharge for target ablation. An advanced degree of crystallization was obtained for the films deposited on alumina substrate post-annealed at 1000 8C. The crystalline lattice constants of the films are very close to those of the target material, which confirms the same stoichiometry in ZST films and in the bulk.