Title of article :
Cobalt-doped ZnO – a room temperature dilute magnetic semiconductor
Author/Authors :
C.B. Fitzgerald *، نويسنده , , M. Venkatesan، نويسنده , , J.G. Lunney، نويسنده , , L.S. Dorneles، نويسنده , , J.M.D. Coey، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
493
To page :
496
Abstract :
Room temperature ferromagnetism is observed in thin films of ZnO doped with 1–25 at.% cobalt. Bulk samples were synthesized by a solid-state reaction technique and (1 1 0) textured thin films were prepared by pulsed laser deposition on R-cut sapphire substrates. Films are semiconducting and transparent. Resisitivity increases with increasing cobalt content. Room temperature magnetic moments of 0.5-5 mB per Co atom were measured in the thin films. Optical spectrometry indicates that cobalt enters the tetrahedral sites of the wurtzite structure as Co2+.
Keywords :
ferromagnetism , Cobalt-doped ZnO , Magnetic semiconductor
Journal title :
Applied Surface Science
Serial Year :
2005
Journal title :
Applied Surface Science
Record number :
1001146
Link To Document :
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