Title of article
Photoexcitation-induced processes in amorphous semiconductors
Author/Authors
Jai Singh *، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
50
To page
55
Abstract
Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous
chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous
semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with
previous theories
Keywords
Amorphous semiconductors , volume expansion , photodarkening , Photo-induced processes , Radiative recombination
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1001176
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