Title of article :
Pulsed laser-induced phase transformations in
CdTe single crystals
Author/Authors :
E. Gatskevich، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
Kinetics of laser-induced phase transitions in CdTe has been studied by in situ (during laser processing) and ex situ (before
and after laser irradiation) methods. The samples were irradiated in air by a ruby laser with pulse duration of 80 ns and energy
density range from 0.02 to 0.5 J/cm2. Time-resolved reflectivity measurements were carried out at the wavelengths of
l1 = 1064 nm and l2 = 532 nm. The time evolution of reflectivity for probing beams with photon energies below (l1) and
above (l2) than the semiconductor energy gap was analyzed. The reflectivity value of CdTe at l = 694 nm was measured versus
irradiation energy density. The reflectivity was 0.28 at room temperature and 0.36 in the liquid phase. The changes in the surface
morphology were studied by optical and atomic force microscopy for different energy densities of the laser irradiation
Keywords :
AIIBVI semiconductors , Phase transformations , Reflectivity , laser irradiation , CdTe
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science