Author/Authors :
L.S. Dorneles، نويسنده , , D. O’Mahony، نويسنده , , C.B. Fitzgerald *، نويسنده , , Michael F. McGee، نويسنده , , M. Venkatesan، نويسنده , , I. Stanca، نويسنده , , J.G. Lunney، نويسنده , , J.M.D. Coey، نويسنده ,
Abstract :
We have studied the structural and magnetic properties of thin films of ZnO and GaN semiconductors doped with magnetic
and non-magnetic transition-metals. The films were prepared on sapphire substrates by pulsed laser deposition from doped
ceramic targets. Room temperature ferromagnetism was observed in ZnO (doped with Sc, Ti, V, Fe, Co or Ni) and in Mn-doped
GaN films. In both cases, single crystal epitaxial growth was observed. The higher dopant:Zn ratio observed in the films is
attributed to the preferential sputtering of Zn by energetic ions in the laser ablation plasma plume
