Title of article
Simulation of growth process of thin film on non-planar substrate
Author/Authors
H.J. Qi*، نويسنده , , J.D. Shao، نويسنده , , D.P. Zhang، نويسنده , , K. Yi، نويسنده , , Z.X. Fan، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
85
To page
90
Abstract
In (2 + 1) dimension, growth process of thin film on non-planar substrate in Kuramoto–Sivashinsky model is studied with
numerical simulation approach. 15 15 semi-ellipsoids arranged orderly on the surface of substrate are used to represent initial
rough surface. The results show that at the initial stage of growth process, the surface morphology of thin film appears to be gridstructure,
and the interface width constantly decreases with the growth time, then reaches minimum. However, the grid-structure
becomes ambiguous, and granules of different sizes distribute evenly on the surface of thin film with the increase of growth time.
Thereafter, the average size of granules and the interface width gradually increase, and the surface morphology of thin film
presents fractal properties. The numerical results of height–height correlation functions of thin film verify the surface
morphology of thin film to be fractal for a longer growth time. By fitting of the height–height correlation functions of thin
film with different growth times, the growth process is described quantitatively
Keywords
Simulation , morphology , growth model
Journal title
Applied Surface Science
Serial Year
2005
Journal title
Applied Surface Science
Record number
1001279
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