Title of article :
Well-aligned ZnO nanowires grown on Si substrate via metal–organic chemical vapor deposition
Author/Authors :
Yu-Jia Zeng، نويسنده , , Zhizhen Ye، نويسنده , , Wei-Zhong Xu، نويسنده , , Liping Zhu، نويسنده , , Binghui Zhao، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
280
To page :
283
Abstract :
ZnO nanowires were grown on silicon substrate by metal–organic chemical vapor deposition (MOCVD) without catalysts. The scanning electron microscopy (SEM) observations along with X-ray diffraction (XRD) results suggest that the ZnO nanowires are single crystals vertically well-aligned to silicon substrate. Room-temperature photoluminescence (PL) measurement reveals strong UV emission and weak green emission, which demonstrates that the nanowires are of good optical properties. The mechanism of the catalyst-free growth of ZnO nanowires on silicon substrate is proposed.
Keywords :
SCANNING ELECTRON MICROSCOPY , nanowires , Metal–organic chemical vapor deposition , Zinc compounds
Journal title :
Applied Surface Science
Serial Year :
2005
Journal title :
Applied Surface Science
Record number :
1001356
Link To Document :
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