Field emission characteristics of oriented-AlN thin film on tungsten tip

(0 0 2) Oriented-aluminum nitride (AlN) films with different thicknesses were deposited on tungsten (W) tips by using radio frequency magnetron reactive sputtering system. Compared studies of field emission (FE) characteristics were performed between the bare and AlN coatedWtips. The results showed that enhanced electron emission could be obtained from oriented- AlN film onWtip. The hysteresis behaviors shown in Current–electric field (I–E) curves during downward electric field sweeps were observed, and the extent of hysteresis in I–E curves strongly depended on the thickness of the AlN film. The stability measurement of FE current presented that the hysteresis could be attributed to the charging in AlN film as an insulator.