Characterization of fritting phenomena on Al electrode for low contact force probe card

We have investigated the characteristics of fritting of thin oxide film on an aluminum electrode for application to a probe card with low contact force. The fritting is a kind of electric breakdown of oxide film on metal electrode. It can be utilized for making electric contacts between the test probe and the electrode on LSI chips without a large force. The voltage and the contact force needed to cause fritting on a sputtered Al film was measured using W, BeCu and Pd needle probes. The contact resistance was also measured. A fritting was occurred by applying a contact load of 1 mN and voltage of 5 V. The contact resistance decreases with increasing the maximum current that passes through the contact. A current of 500 mA is enough to obtain the contact resistance of 1 (Omega), which is low enough in practical test of signal lines. No damages were found on the Al film by optical microscope and scanning electron microscope observation.