Low energy RBS and SIMS analysis of the SiGe quantum well

TheGe concentration in aMBEgrownSiGe and the depth of the quantumwell has been quantitatively analysed bymeans of low energy Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS). The concentrations of Si and Ge were supposed to be constant, except for the quantum well, where the nominal germanium concentration was at 5%. Quantitative informationwas deduced out of rawdata bycomparison to SIMNRAsimulated spectra.With the knowledge of the response function of the SIMS instrument (germanium delta (d) layer) and using the model of forward convolution (point to point convolution) it is possible to determine the germanium concentration and the thickness of the analysed quantum well out of raw SIMS data.