Analysis of chemical dissolution of the barrier layer of porous oxide on aluminum thin films using a re-anodizing technique

Chemical dissolution of the barrier layer of porous oxide formed on thin aluminum films (99.9% purity) in the 4% oxalic acid after immersion in 2 mol dm 3 sulphuric acid at 50 8C has been studied. The barrier layer thickness before and after dissolution was calculated using a re-anodizing technique. It has been shown that above 57 V the change in the growth mechanism of porous alumina films takes place. As a result, the change in the amount of regions in the barrier oxide with different dissolution rates is observed. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with a low dissolution rate. Above 60 V the barrier oxide contains three layers: the outer layer with a high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with a low dissolution rate.We suggest that the formation of the outer layer of barrier oxide with a high dissolution rate is linked with the injection of protons or H3O+ ions from the electrolyte into the oxide film at the anodizing voltages above 57 V.