Title of article :
Combinatorial exploration of flux material for Bi4Ti3O12 single crystal film growth
Author/Authors :
R. Takahashi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
2477
To page :
2481
Abstract :
The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phasemediated epitaxy of Bi4Ti3O12 single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi2O3 and Bi4Ti3O12) and an impurity flux (VOx, WOx, CuOx, BiPOx, BaO, MoOx) were fabricated on the SrTiO3 (0 0 1) substrates. Then, stoichiometric Bi4Ti3O12 was grown on each one of these flux libraries at a temperature presumed to melt the flux. Highthroughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi2O3, for Bi4Ti3O12 single crystal film
Keywords :
pulsed laser deposition , Flux-mediated epitaxy , Oxide thin film , combinatorial chemistry , Bi4Ti3O12
Journal title :
Applied Surface Science
Serial Year :
2006
Journal title :
Applied Surface Science
Record number :
1001731
Link To Document :
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