Kinetics of residual gas adsorption on Ge(1 1 1) surface in low-energy electron backscattering

Low-energy (0.4–1.2 eV) electron backscattering is applied for the investigation of kinetics of residual gas adsorption effect on the concentration and energy positions of surface electron states of Ge(1 1 1) surface. Chemosorption of residual gas molecules on Ge(1 1 1) at P 10 7 Pa and room temperature is shown to be most active during the first 48 h. Low concentration of dangling valence bonds on the reconstructed Ge(1 1 1) (2 8) surface is shown to determine its low activity to chemosorption