Title of article :
Ab initio comparative study of C54 and C49 TiSi2 surfaces
Author/Authors :
Tao Wang، نويسنده , , Soon-Young Oh، نويسنده , , Won Jae Lee، نويسنده , , Yong-Jin Kim، نويسنده , , Hi-Deok Lee، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
8
From page :
4943
To page :
4950
Abstract :
A theoretical comparison of C54 and C49 TiSi2 surfaces is presented, using ab initio plane-wave ultrasoft pseudopotential method based on generalized gradient approximation (GGA). The different surface energies of TiSi2 have not only been calculated out, but the preferential formation of C49 phase in solid-state reaction could be explained by smaller surface energies and Poisson’s ratio of C49 TiSi2 as well. As for polar C54 TiSi2(1 0 0) and C49 TiSi2(0 1 0) surfaces, the Si termination surfaces are more stable
Keywords :
Ab initio , silicide , TiSi2 , Surface energy
Journal title :
Applied Surface Science
Serial Year :
2006
Journal title :
Applied Surface Science
Record number :
1002102
Link To Document :
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