Title of article :
Light emission from silicon nanocrystals: Probing a single quantum dot
Author/Authors :
I. Sychugov، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
5249
To page :
5253
Abstract :
Analysis of low-temperature photoluminescence measurements performed on single silicon nanocrystals is presented. The luminescence emission linewidth of Si nanocrystals is found to be less than thermal broadening at low temperature, confirming the atomic-like nature of their energetic states. Beside the main peak the low-temperature spectra reveal a 6 meV replica, the origin of which is discussed. For some of the investigated dots, we also observe a 60 meV transverse optical (TO) phonon replica. The regular arrangement of individual nanocrystals used in this work enables combined high-resolution transmission electron microscopy (TEM) and low-temperature photoluminescence characterization of the same single quantum dot.
Keywords :
Silicon nanocrystal , luminescence
Journal title :
Applied Surface Science
Serial Year :
2006
Journal title :
Applied Surface Science
Record number :
1002140
Link To Document :
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