Abstract :
The surface structure of the 3 3 reconstruction of the 4H-SiC (0 0 0 1) surface was investigated with surface X-ray diffraction (SXRD).
Of the studied models, the twist model proposed by Starke et al. [U. Starke, J. Schardt, J. Bernhardt, M. Franke, K. Reuter, H.Wedler, K. Heinz,
J. Furthmuller, P. Kackell, F. Bechstedt, Phys. Rev. Lett. 80 (1998) 758] gave the best fit to the experimental data. The structural parameters were
determined accurately
Keywords :
silicon carbide , reconstruction , X-ray diffraction , SiC , Surface structure
