Title of article :
Temperature dependent low energy electron microscopy
study of Ge growth on Si(1 1 3)
Author/Authors :
T. Clausen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
We investigated the initial Ge nucleation and Ge island growth on a Si(1 1 3) surface using low energy electron microscopy and low energy
electron diffraction. The sample temperature was varied systematically between 380 8C and 590 8C. In this range, a strong temperature dependence
of the island shape is observed.With increasing temperature the Ge islands are elongated in the ½33 ¯2 direction. Simultaneously, the average island
size increases while their density decreases. From the Arrhenius-like behaviour of the island density, a Ge adatom diffusion barrier height of about
0.53 eV is deduced
Keywords :
GE , Epitaxial growth , LEEM , Si(1 1 3) , LEED1. Introduction
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science