Ellipsometric investigation of optical constant and energy band gap of Zn1 xMnxSe/GaAs (1 0 0) epilayers

Zn1 xMnxSe/GaAs (1 0 0) epilayers were grown using a hot-wall epitaxy method. The spectroscopic ellipsometry was used to determine the optical dielectric constant. The obtained pseudodielectric function spectra revealed the distinct structures at energies of E0, E0 + D0, E1, E1 + D1, E2 and E00 + D0 critical points (CPs) at lower Mn composition range. These critical points were determined by analytical line-shapes fitted to numerically calculated derivatives of their pseudodielectric functions. The peak characteristics were changed with the change in Mn composition. The spectral dependence of pseudodielectric function hei was used to obtain the fundamental energy gaps E0 including a unique relation with Mn composition. Also, the shifting and broadening of the CPs were observed with increasing Mn composition