Title of article :
Integrated description for random adsorption and 2D-island growth kinetics in thin film growth: Autocatalytic-reaction model and kinetic Monte Carlo simulation
Author/Authors :
Hideaki Togashi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
7
From page :
5900
To page :
5906
Abstract :
Because of the interplay among various surface processes, an integrated description of 2D filmgrowth is usually a very difficult task. As far as adsorption–migration–desorption of precursors and the resultant nucleation, growth, and coalescence of 2D islands up to 1monolayer are concerned, however, the autocatalytic-reaction (ACR) model [Phys. Rev. Lett. 82 (1999) 2334] can be a rare exception, which satisfactorilymodels the oxide film uptake curve during Si dry oxidation froma Langmuir to sigmoidal behaviors. AkineticMonte Carlo (KMC) simulation, conducted to mimic the2Dgrowth of thin films, shows a similar shift froma Langmuir to sigmoidal uptake behavior by varying the parameters corresponding to adsorption, migration, and desorption. A comparison betweenACR andKMCclarifies that the success of theACRmodel lies in its effective inclusion of adsorption of species as well as of nucleation, growth, and coalescence of islands.Arecipe is presented to translate theACRparameters toKMCones, which allows one to discuss the surface morphology based on the ACR analysis on the film uptake curve
Keywords :
Kinetic Monte Carlo simulation , Thin Film Growth , Autocatalytic reaction , Coalescence , Island growth , Nucleation , Si oxidation
Journal title :
Applied Surface Science
Serial Year :
2006
Journal title :
Applied Surface Science
Record number :
1002262
Link To Document :
بازگشت