Title of article :
High-intensity Si cluster ion emission from a silicon target bombarded with large Ar cluster ions
Author/Authors :
Satoshi Ninomiya *، نويسنده , , Takaaki Aoki، نويسنده , , Toshio Seki، نويسنده , , Jiro Matsuo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
4
From page :
6550
To page :
6553
Abstract :
Secondary ions emitted from Si targets were measured with a quadrupole mass spectrometer under large Ar cluster and monomer ion bombardment. Incident ion beams with energies from 7.5 to 25 keV were used and the mean size of the Ar cluster ion was about 1000 atoms/ cluster. Sin + ions with n values up to n = 8 were detected under Ar cluster ion bombardment, whereas Si cluster ions were scarcely detected under Ar monomer ion bombardment. These cluster ion yields showed the power law dependence on the cluster size
Keywords :
Ar cluster ion , Secondary ion , Sputtering yield , Low energy
Journal title :
Applied Surface Science
Serial Year :
2006
Journal title :
Applied Surface Science
Record number :
1002380
Link To Document :
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