Title of article :
Secondary ion measurements for oxygen cluster ion SIMS
Author/Authors :
Satoshi Ninomiya *، نويسنده , , Takaaki Aoki، نويسنده , , Toshio Seki، نويسنده , , Jiro Matsuo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
We have proposed to use oxygen cluster ions, which are much larger than molecular ions, as primary ions for secondary ion mass spectrometry
(SIMS). A high intensity gas cluster ion source with a current density of a few mAs/cm2 has been developed. Secondary ions emitted from Si have
been investigated under O2 and Ar cluster ion bombardment. A large enhancement of the yield of secondary ions produced by large O2 and Ar
cluster ions was found. The SIMS system utilizing large O2 cluster ions must give both excellent depth resolution and high secondary ion yield.
Keywords :
Oxygen cluster ion , secondary ion mass spectrometry , Low energy , Sputtering yield
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science