Title of article :
Performance of a C60 + ion source on a dynamic SIMS instrument
Author/Authors :
Albert J. Fahey، نويسنده , , Greg Gillen، نويسنده , , Peter Chi Keung Cheung، نويسنده , , Christine M. Mahoney، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
3
From page :
7312
To page :
7314
Abstract :
An IonOptika1 C60 + ion source has been fitted onto a CAMECA1 ims-4f. Stable ion beams of C60 + and C60 2+ have been obtained with typical currents approaching 20 nA under conditions that allow for several days of source operation. The beam has been able to be focussed into a spot size of 3 mm with an anode voltage of 10 keV and scanning ion images have been acquired. We have performed analyses to characterize the performance of C60 + and C60 2+. Depth profiles of a Cr–Ni multi-layer and polymer films with C60 + have produced excellent results. We have discovered that, under bombardment energies of<12 keVon Si, C60 + will sputter material from the sample but will also produce deposition at a rate that exceeds the sputter rate. The performance of the source and our experiences with its operation will be discussed and some characteristic analysis data will be shown.
Keywords :
Buckminsterfullerene , SIMS ion source , ion source , Cluster ion beams
Journal title :
Applied Surface Science
Serial Year :
2006
Journal title :
Applied Surface Science
Record number :
1002550
Link To Document :
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