Abstract :
Poly(3-methylthiophene) (P3MT)-based porous silicon (PS) substrates were fabricated and characterized by cyclic
voltammetry, scanning electron microscopy, and auger electron spectroscopy. After doping urease (Urs) into the polymeric
matrix, sensitivity and physicochemical properties of the P3MT-based PS substrate was investigated compared to planar silicon
(PLS) and bulk Pt substrates. PS substrate was formed by electrochemical anodization in an etching solution composed of HF,
H2O, and ethanol. Subsequently, Ti and Pt thin-films were sputtered on the PS substrate. Effective working electrode area (Aeff)
of the Pt-deposited PS substrate was determined from a redox reaction of Fe(CN)6
3 /Fe(CN)6
4 redox couple in which nearly
reversible cyclic voltammograms were obtained. The ip versus v1/2 plots showed that Aeff of the PS-based Pt thin-film electrode
was 1.62 times larger than that of the PLS-based electrode.
Electropolymerization of P3MTon both types of electrodes were carried out by the anodic potential scanning under the given
potential range. And then, urease molecules were doped to the P3MT film by the chronoamperometry. Direct electrochemistry of
a Urs/P3MT/Pt/Ti/PS electrode in an acetonitrile solution containing 0.1 mol/L NaClO4 was introduced compared to a P3MT/
Pt/Ti/PS electrode at scan rates of 10 mV s 1, 50mVs 1, and 100 mV s 1.
Amperometric sensitivity of the Urs/P3MT/Pt/Ti/PS electrode was ca. 1.67 mAmM 1 per projected unit square centimeter, and
that of the Urs/P3MT/Pt/Ti/PLS electrode was ca. 1.02 mAmM 1 per projected unit square centimeter in a linear range of 1–
100 mM urea concentrations. 1.6 times of sensitivity increase was coincident with the results from cyclic voltammetrc analysis.
Surfacemorphologyfromscanning electronmicroscopy(SEM)imagesofPt-depositedPSelectrodes beforeandafter thecoating
of Urs-doped P3MT films showed that pore diameter and depth were 2 mm and 10 mm, respectively.Multilayered-film structures
composed of metals and organics for both electrodes were also confirmed by auger electron spectroscopy (AES) depth profiles.
