p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant

Phosphorus-doped p-type ZnO thin films have been realized by metalorganic chemical vapor deposition (MOCVD). The conduction type of ZnO films is greatly dependent on the growth temperature. ZnO films have the lowest resistivity of 11.3 Vcm and the highest hole concentration of 8.84 1018 cm 3 at 420 8C. When the growth temperature is higher than 440 8C, p-type ZnO films cannot be achieved. All the films exhibited ptype conduction after annealing, and the electrical properties were improved comparing with the as-grown samples. Secondary ion mass spectroscopy (SIMS) test proved that phosphorus (P) has been incorporated into ZnO.