Abstract :
The influence of GaAs(1 0 0) 28 substrate misorientation on the formation and optical properties of InAs quantum dots (QDs) has been studied
in compare with dots on exact GaAs(1 0 0) substrates. It is shown that, while QDs on exact substrates have only one dominant size, dots on
misoriented substrates are formed in lines with a clear bimodal size distribution. Room temperature photoluminescence measurements show that
QDs on misoriented substrates have narrower FWHM, longer emission wavelength and much larger PL intensity relative to those of dots on exact
substrates. However, our rapid thermal annealing (RTA) experiments indicate that annealing shows a stronger effect on dots with misoriented
substrates by greatly accelerating the degradation of material quality
