Author/Authors :
C.Q. Hu، نويسنده , , W.T. Zheng and Chang Q. Sun، نويسنده , , J.J. Li، نويسنده , , Q. Jiang، نويسنده , , H.W. Tian، نويسنده , , X.Y. Lu، نويسنده , , J.W. Liu ، نويسنده , ,
L. Xu، نويسنده , , J.B. Wang، نويسنده ,
Abstract :
The antireflection Germanium carbide (Ge1–xCx) coating, deposited using RF reactive sputtering, on both sides of ZnS substrate wafer has been
developed. The infrared (IR) transmittance spectra show that the IR transmittance in the wavelength region between 8 and 12 mm for the designed
system Ge1–xCx/ZnS/Ge1–xCx is greatly enhanced compared to that for ZnS substrate. In addition, the double-layer coated ZnS substrate is
approximately four times as hard as uncoated ZnS substrate. This investigation indicates that a double-layer Ge1–xCx coating can be used as an
effective antireflection and protection coating on ZnS infrared window
Keywords :
rf Reactive sputtering , Zinc sulphide , Ge1–xCx films , Antireflection and protection coatings
