Potential dependence of cuprous/cupric duplex film growth on copper electrode in alkaline media

The duplex oxide film potentiostatically formed on copper in concentrated alkaline media has been investigated by XRD, XPS, negative-going voltammetry and cathodic chronopotentiometry. The interfacial capacity was also measured using fast triangular voltage method under quasistationary condition. The obvious differences in the thickness, composition, passivation degree and capacitance behavior were observed between the duplex film formed in lower potential region ( 0.13 to 0.18 V versus HgjHgO electrode with the same solution as the electrolyte) and that formed in higher potential region (0.18–0.60 V). Cuprous oxides could be formed and exist stably in the inner layer in the both potential regions, and three cupric species, soluble ions and Cu(OH)2 and CuO, could be independently produced from the direct oxidation of metal copper, as indicated by three pairs of redox voltammetric peaks. One of the oxidation peaks appeared only after the scan was reversed from high potential and could be attributed to CuO formation upon the pre-accumulation of O2 ions within the film under high anodic potentials. A new mechanism for the film growth on the investigated time scale from 1 to 30 min is proposed, that is, the growth of the duplex film in the lower potential region takes place at the filmjsolution interface to form a thick Cu(OH)2 outer layer by field-assisted transfer of Cu2+ ions through the film to solution, whereas the film in the higher potential region grows depressingly and slowly at the metaljfilm interface to form Cu2O and less CuO by the transfer of O2 ions through the film to electrode.