Fabrication of p-type Li-doped ZnO films by pulsed laser deposition

p-Type ZnO thin films have been realized via doping Li as acceptor by using pulsed laser deposition. In our experiment, Li2CO3 was used as Li precursor, and the growth temperature was varied from 400 to 600 8C in pure O2 ambient. The Li-doped ZnO film prepared at 450 8C possessed the lowest resistivity of 34 V cm with a Hall mobility of 0.134 cm2 V 1 s 1 and hole concentration of 1.37 1018 cm 3. X-ray diffraction (XRD) measurements showed that the Li-doped ZnO films grown at different substrate temperatures were of completely (0 0 2)-preferred orientation