X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(0 0 1)

TiO2 and TiNxOy thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO2[1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate ( 80 A ° /min) of TiO2 and ( 40 A ° /min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., f-scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained.