Author/Authors :
W.M. Zhou *، نويسنده , , Susan Y.J. Wu، نويسنده , , Eric Siu-Wai Kong، نويسنده , , F. Zhu، نويسنده , , Z.Y. Hou، نويسنده , , Y.F. Zhang، نويسنده ,
Abstract :
b-SiC nanowires with an average diameter of 8–20 nm were synthesized using a simple thermal evaporation of SiO powders onto activated
carbon fibers. Field emission was investigated based on the SiC nanowires deposited on a platinum film. A low turn-on field of 3.1–3.5 V mm 1 was
measured at an anode-sample separation of 100–140 mm. This type of SiC nanowires can be applied as field emitters in displays as well as vacuum
electronic devices
Keywords :
Nanowires , Field emission with low turn-on field , b-Silicon carbide nanowires , SiC
