Characterization of In/Pd and Pd/In/Pd thin films by ellipsometric, XRD and AES methods

Abstract In/Pd and Pd/In/Pd thin films were prepared by thermal evaporation on the SiO2 substrate in a vacuum. The structural and optical properties of the films were investigated by means of X-ray diffractometry (XRD), Auger electron spectroscopy (AES) and spectroscopic ellipsometry (SE). Auger depth profile studies were performed in order to determine the composition of elements in the Pd-In systems. Interdiffusion of metals was detected at room temperature. Optical properties of Pd-In composite layers formed due to the interdiffusion were derived from ellipsometric quantities C and D measured in the photon energy range 0.75–6.50 eV at different angles of incidence. The effective optical spectra show absorption peaks dependent on the composition of nonuniform films. The XRD patterns indicated formation of Pd1 xInx intermetallic phases in the samples.