Abstract :
Au contacts were deposited on bulk, n-type single-crystal ZnO at either 77 Kor 300 K.The room temperature deposition produced contacts with
ohmic characteristics. By sharp contrast, the cryogenic deposition produced rectifying characteristics with barrier heights around 0.4 eV. The
differences in contact behavior were stable to anneal temperatures of 300 8C. There were no differences in near-surface stoichiometry for the
different deposition temperatures, while the low temperature contacts showed a more uniform appearance. With further optimization of the predeposition
cleaning process, this may be a useful method for engineering barrier heights on ZnO.