Title of article :
Negative differential resistance of TEMPO molecules on Si(1 1 1)
Author/Authors :
Ann-Sofie Hallba¨ck، نويسنده , , Bene Poelsema، نويسنده , , Harold J.W. Zandvliet، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
6
From page :
4066
To page :
4071
Abstract :
Negative differential resistance (NDR) has been observed for individual 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) molecules on Si(1 1 1) in ultra high vacuum (UHV) scanning tunneling microscopy (STM) and spectroscopy (STS) measurements at room temperature. NDR effects were observed exclusively at negative bias voltage using an n-type Si(1 1 1) sample. At 77 K no NDR effects were observed, but the I(V) curves were similar in shape to those recorded on bare Si(1 1 1) sites. TEMPO was observed to adsorb preferentially at corner adatom sites of the Si(1 1 1)- 7 7 structure. Although the Si(1 1 1)-7 7 reconstruction was conserved, local defects were frequently observed in the vicinity of the TEMPO adsorbates.
Keywords :
adsorption , Semiconductors , charge transport , STM , Molecular electronics
Journal title :
Applied Surface Science
Serial Year :
2007
Journal title :
Applied Surface Science
Record number :
1003450
Link To Document :
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