Title of article :
Luminescence properties of type-II quantum well light-emitting diodes formed with NPB and Alq3
Author/Authors :
Jin-Zhao Huang، نويسنده , , Zheng Xu *، نويسنده , , Su-Ling Zhao، نويسنده , , Fujun Zhang، نويسنده , , Yong Wang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
4
From page :
4542
To page :
4545
Abstract :
The organic quantum well devices which are similar to the type-II quantum well of inorganic semiconductor have been fabricated. In the electroluminescence, the blue shift of spectrum with increasing applied voltage is observed, which is interpreted by exciton confinement effect and polarization effect, and the generation of exciton, including carrier injection and energy transfer, is discussed. This energy transfer from barrier to well is studied by photoluminescence and is interpreted in terms of Fo¨rster energy transfer. The electromodulation of photoluminescence demonstrates the quenching mainly comes from the dissociation of exciton in NPB and that in Alq3 is very stable.
Keywords :
Organic quantum well , Photoluminescence , Electroluminescence , Electromodulation , Energy transfer
Journal title :
Applied Surface Science
Serial Year :
2007
Journal title :
Applied Surface Science
Record number :
1003526
Link To Document :
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