Abstract :
Zinc oxide thin films (ZnO, ZnO:Li, ZnO:Al) were deposited on glass substrates by a sol–gel technique. Zinc acetate, lithium acetate, and
aluminum chloride were used as metal ion sources in the precursor solutions. XRD analysis revealed that Li doped and undoped ZnO films formed
single phase zincite structure in contrast to Al:ZnO films which did not fully crystallize at the annealing temperature of 550 8C. Crystallized films
had a grain size under 50 nm and showed c-axis grain orientation. All films had a very smooth surface with RMS surface roughness values between
0.23 and 0.35 nm. Surface roughness and optical band tail values increased by Al doping. Compared to undoped ZnO films, Li doping slightly
increased the optical band gap of the films
Keywords :
Transparent-conductive oxide , Doped zinc oxide , Sol–gel , Thin film