Post-annealing influence on properties of N–In codoped ZnO thin films prepared by ion beam enhanced deposition method

N–In codoped ZnO thin films were prepared by ion beam enhanced deposition method (IBED) and were annealed in nitrogen and oxygen ambient after deposition. The influence of post-annealing on structure, electrical and optical properties of thin films were investigated. Asdeposited and all post-annealed samples showed preferential orientation along (0 0 2) plane. Electrical property studies indicated that the asdeposited ZnO film showed p-type with a sheet resistance of 67.5 kV. For ZnO films annealed in nitrogen with the annealing temperature increasing from 400 to 800 8C, the conduction type of the ZnO film changed from p-type to n-type. However, for samples annealed in oxygen the resistance increased sharply even at a low annealing temperature of 400 8C and the conduction type did not change. Room temperature PL spectra of samples annealed in N2 and in O2 showed UV peak located at 381 and 356 nm, respectively.