Fabrication of p-type ZnMgO films via pulsed laser deposition method by using Li as dopant source

p-Type Zn0.9Mg0.1O thin films have been realized via monodoping of Li acceptor by using pulsed laser deposition. The Li-doped Zn0.9Mg0.1O thin films possessed a good crystallinity with a (0 0 0 2) preferential orientation and a high transmittance in the visible region. Secondary ion mass spectroscopy revealed that Li has been successfully incorporated into the Zn0.9Mg0.1O films. The obtained films with the best electrical properties show a hole concentration in the order of 1017 cm 3 and a room-temperature resistivity in the range of 58–72 V cm