Nanoscopic photodeposited structures analyzed by an evanescent optical method

The evanescent field propagating in waveguides was used to evaluate the profile and growth rate of laser photodeposited a-Se. A pulsed KrF excimer laser was used for deposition. The differential-evanescent light leaking image, was used to analyze the nanostructures in the deposited zones. The relation between the emerging light intensity of the evanescent wave and the optical light intensity propagating in the waveguide was connected to an effective range of the evanescent wave leaking power into the deposited material. The technique provides the nanometric profiles of the ultra-thin photodeposited structures.