Title of article :
The study of dielectric relaxation and glass forming tendency in Cd–Se–Te glassy system
Author/Authors :
S.M. El-Sayed *، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
5
From page :
7089
To page :
7093
Abstract :
The dielectric relaxation spectroscopes of CdxSe70 xTe30 (where x = 0, 5, 7, 10) alloy have been investigated in the temperature range 298– 373 K and in the frequency range 100 Hz to 100 kHz near the percolation threshold. The frequency and temperature dependence on the dielectric constant showed a Debye dielectric relaxation process. Using Debye relation, the dielectric constant (e0), the most probable relaxation time (t) and the barrier height (W) were estimated for binary ternary chalcogenide systems. In addition, the analysis of the results suggests that the effect of Cd content on electronic conduction of the system. The experimental results support to some extent the above criterion in the case of Cd–Se–Te ternary alloy.
Keywords :
dielectric properties , amorphous , Semiconductors , ac conductivity
Journal title :
Applied Surface Science
Serial Year :
2007
Journal title :
Applied Surface Science
Record number :
1003946
Link To Document :
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