Laser synthesis of semiconductor nanostructures with narrow band gap

Semiconductor nanostructures with narrow band gap were synthesized by means of laser chemical vapor deposition (LCVD) of elements from iron carbonyl vapors [Fe(CO)5] under the action of Ar+ laser radiation (lL = 488 nm) on the Si substrate surface. The temperature dependence of the specific conductivity of these nanostructures in the form of thin films demonstrated typical semiconductor tendency and gave the possibility to calculate the band gap for intrinsic conductivity (Eg) and the band gap assigned for impurities (Ei), which were depended upon film thickness and applied electrical field. Analysis of deposited films with scanning electron microscopy (SEM) and atomic force microscopy (AFM) demonstrated their cluster structure with average size not more than 100 nm. Semiconductor properties of deposited nanostructures were stipulated with iron oxides in different oxidized phases according to X-ray photoelectron spectroscopy (XPS) analysis. These deposited nanostructures were irradiated with Q-switched YAG laser (lL = 1064 nm) at power density about 6 107 W/cm2. This irradiation resulted in the crystallization process of deposited films on the Si substrate surface. The crystallization process resulted in the synthesis of iron carbide–silicide (FeSi2 xCx) layer with semiconductor properties too. The width of the band gap Eg of the synthesized layer of iron carbide– silicide was less than for deposited films based on iron oxides Fe2O3 x (0 x 1).