• Title of article

    A mathematical model for material removal and chemical–mechanical synergy in chemical–mechanical polishing at molecular scale

  • Author/Authors

    H. C. Li and C. J. Bai، نويسنده , , Y.W. Zhao *، نويسنده , , Y.G. Wang، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    6
  • From page
    8489
  • To page
    8494
  • Abstract
    This paper presents a mathematical material removal model based on the chemical and mechanical synergistic effects in the chemical– mechanical polishing (CMP) process. It seems to explain the transition from a chemically dominant region to a mechanically dominant region. In addition, this model predicts the effects of most variables involved in the CMP process including the processing conditions (velocity, downpressure), pad properties (modulus, hardness and asperity sizes) and slurry characteristics (particle size, concentration and distribution). The results reveal some insights into the micro-contact and wear mechanisms of the CMP process.
  • Keywords
    Chemical–mechanical polishing , modeling , Film generation rate , Molecular scale
  • Journal title
    Applied Surface Science
  • Serial Year
    2007
  • Journal title
    Applied Surface Science
  • Record number

    1004199