Title of article
A mathematical model for material removal and chemical–mechanical synergy in chemical–mechanical polishing at molecular scale
Author/Authors
H. C. Li and C. J. Bai، نويسنده , , Y.W. Zhao *، نويسنده , , Y.G. Wang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
6
From page
8489
To page
8494
Abstract
This paper presents a mathematical material removal model based on the chemical and mechanical synergistic effects in the chemical–
mechanical polishing (CMP) process. It seems to explain the transition from a chemically dominant region to a mechanically dominant region. In
addition, this model predicts the effects of most variables involved in the CMP process including the processing conditions (velocity,
downpressure), pad properties (modulus, hardness and asperity sizes) and slurry characteristics (particle size, concentration and distribution).
The results reveal some insights into the micro-contact and wear mechanisms of the CMP process.
Keywords
Chemical–mechanical polishing , modeling , Film generation rate , Molecular scale
Journal title
Applied Surface Science
Serial Year
2007
Journal title
Applied Surface Science
Record number
1004199
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