Title of article :
Atomic-level investigation of Al and Ni thin film growth on Ni(1 1 1) surface: Molecular dynamics simulation
Author/Authors :
Soon-Gun Lee، نويسنده , , Yong-Chae Chung، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
5
From page :
8896
To page :
8900
Abstract :
Using molecular dynamics (MD) simulation, the structural characteristics of Al and Ni thin film growth on Ni(1 1 1) substrate according to the incident energy of adatoms were investigated. In case of Al on Ni(1 1 1), Al adatoms were grown basically through the layer-by-layer growth mode. On the other hand, Ni thin films on Ni(1 1 1) surface at low incident energy were shown to favor island growth. The steering effect due to atomic attraction, which results in rougher surface, was significantly observed at low incident energy. The growth mode of Ni film was, however, changed to follow layer-by-layer growth mode for the incident energy of 6 eV. The different aspects of surface morphology between Al and Ni deposition on Ni(1 1 1) surface could be successfully explained by the surface diffusion and impact cascade diffusion.
Keywords :
Ni/Ni(1 1 1) , Growth morphology , Molecular dynamics simulation , Al/Ni(1 1 1)
Journal title :
Applied Surface Science
Serial Year :
2007
Journal title :
Applied Surface Science
Record number :
1004265
Link To Document :
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