Title of article
Atomic-level investigation of Al and Ni thin film growth on Ni(1 1 1) surface: Molecular dynamics simulation
Author/Authors
Soon-Gun Lee، نويسنده , , Yong-Chae Chung، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
8896
To page
8900
Abstract
Using molecular dynamics (MD) simulation, the structural characteristics of Al and Ni thin film growth on Ni(1 1 1) substrate according to the
incident energy of adatoms were investigated. In case of Al on Ni(1 1 1), Al adatoms were grown basically through the layer-by-layer growth mode.
On the other hand, Ni thin films on Ni(1 1 1) surface at low incident energy were shown to favor island growth. The steering effect due to atomic
attraction, which results in rougher surface, was significantly observed at low incident energy. The growth mode of Ni film was, however, changed
to follow layer-by-layer growth mode for the incident energy of 6 eV. The different aspects of surface morphology between Al and Ni deposition on
Ni(1 1 1) surface could be successfully explained by the surface diffusion and impact cascade diffusion.
Keywords
Ni/Ni(1 1 1) , Growth morphology , Molecular dynamics simulation , Al/Ni(1 1 1)
Journal title
Applied Surface Science
Serial Year
2007
Journal title
Applied Surface Science
Record number
1004265
Link To Document