• Title of article

    Atomic-level investigation of Al and Ni thin film growth on Ni(1 1 1) surface: Molecular dynamics simulation

  • Author/Authors

    Soon-Gun Lee، نويسنده , , Yong-Chae Chung، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    5
  • From page
    8896
  • To page
    8900
  • Abstract
    Using molecular dynamics (MD) simulation, the structural characteristics of Al and Ni thin film growth on Ni(1 1 1) substrate according to the incident energy of adatoms were investigated. In case of Al on Ni(1 1 1), Al adatoms were grown basically through the layer-by-layer growth mode. On the other hand, Ni thin films on Ni(1 1 1) surface at low incident energy were shown to favor island growth. The steering effect due to atomic attraction, which results in rougher surface, was significantly observed at low incident energy. The growth mode of Ni film was, however, changed to follow layer-by-layer growth mode for the incident energy of 6 eV. The different aspects of surface morphology between Al and Ni deposition on Ni(1 1 1) surface could be successfully explained by the surface diffusion and impact cascade diffusion.
  • Keywords
    Ni/Ni(1 1 1) , Growth morphology , Molecular dynamics simulation , Al/Ni(1 1 1)
  • Journal title
    Applied Surface Science
  • Serial Year
    2007
  • Journal title
    Applied Surface Science
  • Record number

    1004265