Surface chemistry and optimization of focused ion beam iodine-enhanced etching of indium phosphide

Focused ion beam physical sputtering and iodine-enhanced etching of indium phosphide (InP) were performed. Up to 15 enhanced etching rates over sputtering were measured at room temperature, due to the addition of iodine to the sputter-process. Reaction mechanisms and products are discussed and characterized. The reaction is limited by the desorption of indium triiodide (InI3) at room temperature. InI3 has to be removed by sputtering, which simultaneously amorphizes the underlying substrate. Surface roughness and stoichiometry of InP are compared for sputtering and etching. Gallium-contamination and the damaged zone in InP are significantly reduced by iodine-enhanced etching. Based on the reaction mechanisms, an optimum beam scanning strategy is proposed which allows precise microfabrication in reduced time and minimizes damage to the substrate. The method is also applicable for other halide gas etching processes of III–V semiconductors