• Title of article

    Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scale

  • Author/Authors

    Yongguang Wang، نويسنده , , Yongwu Zhao *، نويسنده , , Wei An، نويسنده , , Jun Wang، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    5
  • From page
    9137
  • To page
    9141
  • Abstract
    This paper proposes a novel mathematical model for chemical mechanical polishing (CMP) based on interface solid physical and chemical theory in addition to energy equilibrium knowledge. And the effects of oxidation concentration and particle size on the material removal in CMP are investigated. It is shown that the mechanical energy and removal cohesive energy couple with the particle size, and being a cause of the nonlinear size-removal rate relation. Furthermore, it also shows a nonlinear dependence of removal rate on removal cohesive energy. The model predictions are in good qualitative agreement with the published experimental data. The current study provides an important starting point for delineating the micro-removal mechanism in the CMP process at atomic scale
  • Keywords
    Binding energy , modeling , Atomic scale , chemical mechanical polishing
  • Journal title
    Applied Surface Science
  • Serial Year
    2007
  • Journal title
    Applied Surface Science
  • Record number

    1004311