Title of article
Density functional study of initial HfCl4 adsorption and decomposition reactions on silicon surfaces with SiON interfacial layer
Author/Authors
Jie Ren، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
6
From page
9148
To page
9153
Abstract
The initial adsorption and decomposition of HfCl4 on silicon surfaces with different types of SiON interfacial layers are investigated using
density functional theory. We find that the reactions of HfCl4 on both the hydroxylated and nitrided silicon surfaces proceed through similar
reaction pathways. By comparison of the reaction energies of HfCl4 with the hydroxyl and amino surface sites, we find that it is both kinetically and
thermodynamically favorable for the reactions of HfCl4 on hydroxyl site of silicon substrates. Comparing with the adjacent bridging oxygen, we
also find that the neighboring hydroxyl can facilitate the adsorption of HfCl4 on the amido surface site. Also, it is more kinetically and
thermodynamically favorable for the reaction of HfCl4 with bridging NH site than that with NH2 site.
Keywords
hafnium , Atomic layer deposition , Density functional theory , dielectrics
Journal title
Applied Surface Science
Serial Year
2007
Journal title
Applied Surface Science
Record number
1004313
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